1 ELM34608AA-N ELM34608AA-N uses advanced trench technology to provide excellent rds(on) and low gate charge. n-channel p-channel ? vds=60v vds=-60v ? id=4.5a id=-3.5a ? rds(on) < 58m(vgs=10v) rds(on) < 90m(vgs=-10v) ? rds(on) < 85m(vgs=4.5v) rds(on) < 135m(vgs=-4.5v) parameter symbol n-ch (max.) p-ch (max.) unit note drain - source voltage vds 60 -60 v gate - source voltage vgs 20 20 v continuous drain current ta=25c id 4.5 -3.5 a ta=70c 4.0 -3.0 pulsed drain current idm 20 -20 a 3 power dissipation ta=25c pd 2.0 2.0 w ta=70c 1.3 1.3 junction and storage temperature range tj,tstg - 55 to 150 - 55 to 150 c general description features maximum absolute ratings thermal characteristics parameter symbol device typ. max. unit note maximum junction - to - ambient rja n-ch 62.5 c /w maximum junction - to - ambient rja p-ch 62.5 c /w complementary mosfet s 2 g 2 d 2 s 1 g 1 d 1 circuit ? n-ch ? p-ch 7 - pin configuration sop-8(top view) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8
2 electrical characteristics (n-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id=250a, vgs=0v 60 v zero gate voltage drain current idss vds=48v, vgs = 0v 1 a vds=40v, vgs = 0v, tj=55c 10 gate - body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250a 1.0 1.5 2.5 v on state drain current id(on) vgs=10v, vds=5v 20 a 1 static drain - source on - resistance rds(on) vgs=10v, id= 4.5a 42 58 m 1 vgs = 4.5v, id = 4a 55 85 forward transconductance gfs vds = 10v, id = 4.5a 14 s 1 diode forward voltage vsd if = is=1.3a, vgs=0v 1 v 1 max.body - diode continuous current is 1.3 a pulsed current ism 2.6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=25v, f=1mhz 650 pf output capacitance coss 80 pf reverse transfer capacitance crss 35 pf switching parameters total gate charge qg vgs=10v, vds=30v, id=4.5a 12.0 16.0 nc 2 gate - source charge qgs 2.4 nc 2 gate - drain charge qgd 2.6 nc 2 turn - on delay time td(on) vgs=10v, vds=30v, id1a rgen=6 11 20 ns 2 turn - on rise time tr 8 18 ns 2 turn - off delay time td(off) 19 35 ns 2 turn - off fall time tf 6 15 ns 2 ELM34608AA-N complementary mosfet ta=25 c note : 1. pulse test : pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. 7 -
3 ELM34608AA-N typical electrical and thermal characteristics (n-ch) 7 - complementary mosfet 4 oct - 01 - 2004 n - & p - channel enhancement mode field effect transistor p5 8 06n v g sop - 8 lead - free niko - sem body diode forward voltage variation with source current and temperature 25 c t = 125 c 0.6 0.1 is - reverse drain current(a) 0.0001 0 0.001 0.01 sd 0.2 0.4 v = 0v 1 10 100 a gs 0.8 1.0 -55 c 1.2 v - body diode forward voltage(v)
4 ELM34608AA-N complementary mosfet 7 - 5 oct - 01 - 2004 n - & p - channel enhancement mode field effect transistor p5 8 06n v g sop - 8 lead - free niko - sem
5 electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id= - 250a, vgs=0v -60 v zero gate voltage drain current idss vds=-48v, vgs= 0v - 1 a vds=-40v, vgs= 0v, tj=55c -10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id= - 250a -1.0 -1.5 -2.5 v on state drain current id(on) vgs= - 10v, vds= - 5v -20 a 1 static drain - source on - resistance rds(on) vgs=-10v, id=-3.5 a 70 90 m 1 vgs =- 4.5v, id =- 3a 100 135 forward transconductance gfs vds =- 5v, id =-3.5 a 9 s 1 diode forward voltage vsd if =is=-1.3a , vgs=0v -1 v 1 max.body - diode continuous current is -1.3 a pulsed current ism -2.6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-30v, f=1mhz 630 pf output capacitance coss 81 pf reverse transfer capacitance crss 33 pf switching parameters total gate charge qg vgs=-10v, vds=-30v id=-3.5a 11.0 15.0 nc 2 gate-source charge qgs 2.1 nc 2 gate-drain charge qgd 2.5 nc 2 turn - on delay time td(on) vgs=-10v, vds=-30v id-1a, rgen=6 6 13 ns 2 turn - on rise time tr 8 18 ns 2 turn - off delay time td(off) 17 31 ns 2 turn - off fall time tf 11 20 ns 2 ELM34608AA-N 7 - complementary mosfet ta=25 c note : 1. pulse test : pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature.
6 typical electrical and thermal characteristics (p-ch) ELM34608AA-N complementary mosfet 7 - 6 oct - 01 - 2004 n - & p - channel enhancement mode field effect transistor p5 8 06n v g sop - 8 lead - free niko - sem body diode forward voltage variation with source current and temperature t = 125 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 s d 0.2 0.6 25 c v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4
7 ELM34608AA-N 7 - complementary mosfet 7 oct - 01 - 2004 n - & p - channel enhancement mode field effect transistor p5 8 06n v g sop - 8 lead - free niko - sem
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